Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-05-22
2010-06-22
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257SE33076
Reexamination Certificate
active
07741647
ABSTRACT:
One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically conductive and/or optically active.
REFERENCES:
patent: 2004/0213307 (2004-10-01), Lieber
patent: 2005/0009224 (2005-01-01), Yang
patent: 2005/0064618 (2005-03-01), Brown et al.
patent: 2005/0079659 (2005-04-01), Duan et al.
patent: 2005/0133254 (2005-06-01), Tsakalakos
patent: 2005/0133476 (2005-06-01), Islam
patent: 2005/0176228 (2005-08-01), Fonash
patent: 2006/0019472 (2006-01-01), Pan et al.
patent: 2006/0038182 (2006-02-01), Rogers
patent: 2006/0204738 (2006-09-01), Dubrow et al.
patent: 2005/017962 (2005-02-01), None
Wendy U. Huynh et al. “Hybrid Nanorod-Polymer Solar Cells.” Science, vol. 295 (Mar. 29, 2002), pp. 2425-2427.
Chin-Ching Lin, et al.; “Enhanced Luminescent and Electrical Properties of Hydrogen-Plasma ZnO Nanorods Grown on Wafer-Scale Flexible Substrates”; Applied Physics Letters 86, 183103, Apr. 25, 2005, National Chiao Tung University.
Pu Xian Gao, et al.; “Three-Dimensional Interconnected Nanowire Networks of ZnO”; Chemical Physics Letters 408 (2005) 174-178; available online at www.sciencedirect.com, Apr. 1, 2005.
Hari Chandrasekaran, et al.; “Growth of Gallium Nitride Textured Fils and Nanowires on Polycrystalline Substrates at Sub-Atmoshpheric Pressures”; Dept of Chemcal Engineering, University of Louisville, KY.
Sreeram Vaddiraju,et al.; “Mechanisms of 1D Crystal Growth in Reactive Vapor Transport: Indium Nitride Nanowires”; Nano Letters, vol. 0, No. 0, A-G; Jun. 15, 2005.
Partial International Search Report; PCT Patent Application No. PCT/US2007/012273, filed May 22, 2007; search issued by European Patent Office (ISA) Oct. 29, 2008.
International Search Report; PCT Patent Application No. PCT/US2007/012273, filed May 22, 2007; search issued by European Patent Office (ISA) Feb. 24, 2009.
Sacilotti, et al. “Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD”, Journal of Crystal Growth, Elsevier, Amsterdam, NL, Dec. 10, 2004.
Sunkara, et al. “Direction dependent homoexpitaxial growth and bandgap of GaN nanowires”, Proc. of SPIE, Feb. 9, 2006.
Kobayashi Nobuhiko
Wang Shih-Yuan
Hewlett-Packard Development Company
Wilson Allan R.
LandOfFree
Utilizing nanowire for different applications does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Utilizing nanowire for different applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Utilizing nanowire for different applications will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4225975