Utilizing multiple polycrystalline silicon masks for diffusion a

Details Utilizing multiple polycrystalline silicon masks for diffusion a Utilizing multiple polycrystalline silicon masks for diffusion a

1976-02-02

1977-12-13

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29578, 148174, 357 52, 357 54, 357 59, 357 23, 427 86, 427 94, 427 95, 427248A, 427 93, H01L 2122, H01L 2131

Patent

active

040627071

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

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Steinmaier et al, "Successive Growth of Si and SiO.sub.2 . . . " J. Electrochem. Soc., vol. 111, No. 2, Feb. 1964, pp. 206-209.
Tombs et al., "Silicon Oxide as an Etching Mask for Silion Nitride" J. Electrochem. Soc., vol. 115, No. 1, Jan. 1968, pp. 101-102.
ABOAF, J.A., "Some Properties of Vapor Deposited Silion Nitride . . . " J. Electrochem. Soc., vol. 116, No. 12, Dec. 1969, pp. 1736-1740.

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