Utilizing multi-layer mask to define isolation and device zones

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29576B, 29576W, 29580, 148 15, 148187, 156648, 156653, 156657, 1566611, 156667, H01L 2126, H01L 21308

Patent

active

044439334

ABSTRACT:
A method is disclosed for the self-aligned manufacture of a semiconductor device having island insulation obtained by thermal oxidation. An insulating layer (preferably of silicon oxide), a layer of silicon nitride, and a layer preferably of aluminum oxide are provided successively on the semiconductor surface. In the last-mentioned layer a basic mask is formed having apertures at the area of all the semiconductor zones to be formed and at the area of the island insulation zones. From this mask the various processes are carried out via a replica mask obtained in the nitride layer.

REFERENCES:
patent: 3488564 (1970-01-01), Crafts
patent: 3576630 (1971-04-01), Yanayawa
patent: 3591840 (1971-07-01), Glinski
patent: 3708360 (1973-01-01), Wakefield
patent: 3748187 (1973-07-01), Aubuchon et al.
patent: 3773566 (1973-11-01), Tsuchimoto
patent: 3860466 (1975-01-01), Workman et al.
patent: 3899363 (1975-08-01), Dennard et al.
patent: 3948694 (1976-04-01), Mills
patent: 4135954 (1979-01-01), Chang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Utilizing multi-layer mask to define isolation and device zones does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Utilizing multi-layer mask to define isolation and device zones , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Utilizing multi-layer mask to define isolation and device zones will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-109018

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.