Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-09-12
1980-11-11
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 148 15, 148174, 156606, 156610, 427 85, 427 87, H01L 21203, H01L 29207
Patent
active
042330920
ABSTRACT:
A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by directing molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substrate. It has not proved practicable to grow an n-type GaAs layer by molecular beam epitaxy using S, Se or Te as dopant in the form of a molecular beam consisting of elemental S, Se or Te.
REFERENCES:
patent: 2994621 (1961-08-01), Hugle et al.
patent: 3716424 (1973-02-01), Schoolar
patent: 3751310 (1973-08-01), Cho
patent: 3839084 (1974-10-01), Cho et al.
patent: 3915765 (1975-10-01), Cho et al.
patent: 3941624 (1976-03-01), Cho
Cho et al., "Molecular Beam Epitaxy of GaAs, AlGaAs and GaP" 1970 Symposium on GaAs, Paper No. 2, pp. 18-29.
Arthur, J. R., "Adsorption of Zm on GaAs" Surface Science, vol. 38, 1973, pp. 394-412.
Cho et al., "Molecular Beam Epitaxy" Progress in Solid State Chemistry, vol. 10, Part 3, pp. 157-191.
Harris Jeffrey J.
Wood Colin E. C.
Briody Thomas A.
Miller Paul R.
Oisher Jack
Rutledge L. Dewayne
Saba W. G.
LandOfFree
Utilizing lead compounds of sulphur, selenium and tellurium as d does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Utilizing lead compounds of sulphur, selenium and tellurium as d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Utilizing lead compounds of sulphur, selenium and tellurium as d will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1689396