Utilizing interdiffusion of sequentially deposited links of HgTe

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29576E, 148174, 148DIG63, 148DIG64, 148DIG160, 156613, 156614, 156DIG72, 156DIG82, 427 87, 357 16, 357 61, H01L 2136, H01L 21477

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045669180

ABSTRACT:
A layer of Cd.sub.x Hg.sub.1-x Te is grown on a substrate by growing layers of HgTe t.sub.1 thick, and CdTe t.sub.2 thick alternately. The thicknesses t.sub.1 and t.sub.2 combined are less than 0.5 .mu.m so that interdiffusion occurs during growth to give a single layer of Cd.sub.x Hg.sub.1-x Te. The HgTe layers are grown by flowing a Te alkyl into a vessel containing the substrate and filled with an Hg atmosphere by an Hg bath. The CdTe layers are grown by flowing of Cd alkyl into the vessel where it combines preferentially with the Te on the substrate. Varying the ratio of t.sub.1 to t.sub.2 varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced to dope the growing layer.

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