Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-11-20
2007-11-20
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000, C250S399000, C356S445000, C356S451000, C345S087000, C345S077000
Reexamination Certificate
active
11205782
ABSTRACT:
A method for monitoring the surface roughness of a metal, comprises impinging a laser beam onto the surface of a metal layer to induce the formation of a plasmon therein, and monitoring a current of decay electrons emitted by the plasmon.
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patent: 2006/0170926 (2006-08-01), Wei et al.
Ditlbacher, H., et al., “Efficiency of local light-plasmon coupling”,Applied Physics letters, AIP, American Institute of Physics, vol. 83, No. 18, p. 3665 lefthand column, paragraph 3, p. 3667. lefthand column, paragraph 1, figures 1,3.
Jasperson, S.N., et al., “Photon-surface-plasmon coupling in thick Ag foils”,Physical Review USA, vol. 188, No. 2, pp. 759-770 (Dec. 1969).
Scherer Axel
Wei David T.
California Institute of Technology
Ladas & Parry LLP
Wells Nikita
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