Utilization of a substrate alignment marker in epitaxial deposit

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29574, 148 15, 148174, 156626, 156662, 156657, 250397, 250492A, H01L 2120, H01L 2166

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041254180

ABSTRACT:
An alignment marker on a substrate surface is covered with polycrystalline semiconductor material during the growth of an epitaxial layer on the monocrystalline substrate. This polycrystalline material is then removed with a selective etchant to re-expose the marker for use in defining an area for processing at the epitaxial layer surface. Permits accurate alignment between buried layers and regions formed from the epitaxial layer surface. Permits provision of the marker on the substrate when it is undesirable to provide the marker on the epitaxial layer surface. Particularly advantageous for electron image projection exposure of electron-sensitive resists.

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patent: 3879613 (1975-04-01), Scott et al.
patent: 3895234 (1975-07-01), O'Keeffe et al.
Scott, J. P., "Electron Image Projector with Automatic Alignment", IEEE Trans. on Electron Devices, vol. ED-22, No. 7, Jul. 1975, pp. 409-413.

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