Using scatterometry to verify contact hole opening during...

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

Reexamination Certificate

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C438S014000, C700S121000, C702S167000

Reexamination Certificate

active

11069458

ABSTRACT:
Systems and methods are described that facilitate verifying that bottom apertures in tapered vias are open and free of obstruction. Scatterometry can be employed to monitor tapered via formation during and/or after a dry etch process on a photoresist bilayer. Information regarding critical dimensions at the bottoms of tapered vias can be analyzed to assess whether bottom apertures exhibit a minimum acceptable diameter that is equal to or greater than a predetermined threshold tolerance. Via apertures with dimensions below the threshold tolerance and/or regions of a wafer evincing unacceptable frequent occurrences of faulty via apertures are considered occluded, or suspect, and a corrective re-etch can be performed thereon.

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