Using multiple coulomb islands to reduce voltage stress

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays

Reexamination Certificate

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C257SE21408, C257SE27108, C438S128000

Reexamination Certificate

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07863651

ABSTRACT:
A substrate is levitated a first distance over a mother substrate when a first group of Coulomb islands are charged. A second group of Coulomb islands are charged and increase a separation to a second distance. When the magnitude of the potential of all Coulomb islands is decreased, the separation decreases from the second distance to the first distance. All potentials associated with the Coulomb islands have decreased yet the distance of separation equals to the first distance. Increasing the number of Coulomb islands in a substrate can reduce the magnitude of potentials applied to the Coulomb islands thereby reducing the concern of voltage stress.

REFERENCES:
patent: 4228527 (1980-10-01), Gerber et al.
patent: 4885719 (1989-12-01), Brahmbhatt
patent: 4947228 (1990-08-01), Gabara
patent: 5298800 (1994-03-01), Dunlop
patent: 5355577 (1994-10-01), Cohn
patent: 5396195 (1995-03-01), Gabara
patent: 5646828 (1997-07-01), Degani et al.
patent: 5708389 (1998-01-01), Gabara
patent: 5838021 (1998-11-01), Ancona
patent: 6141260 (2000-10-01), Ahn et al.
patent: 6281590 (2001-08-01), Gabara
patent: 6300149 (2001-10-01), Smith
patent: 6465336 (2002-10-01), Gabara
patent: 6597048 (2003-07-01), Kan
patent: 6638627 (2003-10-01), Potter
patent: 6798120 (2004-09-01), Fearing
patent: 6841917 (2005-01-01), Potter
patent: 6856297 (2005-02-01), Durham et al.
patent: 6995039 (2006-02-01), Harris
patent: 7217582 (2007-05-01), Potter
patent: 7225674 (2007-06-01), Clark
patent: 7250826 (2007-07-01), Gabara
patent: 7543497 (2009-06-01), Balogh
patent: 7555950 (2009-07-01), Ruohio et al.
patent: 2004/0080456 (2004-04-01), Tran
patent: 2005/0196981 (2005-09-01), Hashimoto
patent: 2006/0065051 (2006-03-01), Balogh
patent: 2006/0122504 (2006-06-01), Gabara
patent: 2007/0018739 (2007-01-01), Gabara
patent: 2007/0176704 (2007-08-01), Gabara
patent: 2007/0204706 (2007-09-01), Kishimoto
patent: 2009/0109595 (2009-04-01), Herchen et al.
patent: 2009/0115071 (2009-05-01), Karashima et al.
patent: 08-320231 (1996-12-01), None
patent: 2001-235329 (2000-02-01), None
Wheeler, H., “Fundamental Limitations of Small Antennas”, Pro. of the IRE, vol. 35, Issue 12, Dec. 1947, pp. 1479-1484.
Bohringer et al. “Computation Methods for Design and Control of MEMS Micromanipulator Arrays”, Computing in Science and Eng., Jan.-Mar. 1997, (vol. 4, No. 1), pp. 17-29.
Cohn et al., “Microassembly Technologies for MEMS”, Proc. SPIE Micromaching and Microfabrication, Sanata Clara, Ca. Sep. 21-22, 1998.
Liu, “Novel Electrostatic Repulsive Forces in MEMS Applications by Nonvolatile Charge Injection”, The 15th IEEE Int. Conf. MEMS, 2002, p. 598-601.
Fearing, “Survey of sticking effects for micro parts handling”, Intelligent Robots and Systems 95, Proc. 1995 IEEE/RSJ Inter, Conf. Aug. 5-9, 1995, pp. 212-217.
Wakayama et aI, Nanotechnology, 15,2004, pp. 1446-1449, p. 14.
Nakajima et al Applied Physics Letters 71, Jul. 3, 1997, pp. 353-355.
Electrical/Optical Issues in I/O CMOS Interfaces, Gabara, T.J.;Optical Interconnect Workshop, Oak Ridge National Laboratory, Oak Ridge, TN, Nov. 8, 1999.—p. TJG 8.
Wakayama et al. Nanotechnology, 15,2004, pp. 1446-1449, p. 14.
Nakajima et al Applied Physics Letters 71, Jul. 3, 1997, pp. 353-355.

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