Using deuterated source gases to fabricate low loss GeSiON...

Optical waveguides – Planar optical waveguide

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C385S130000

Reexamination Certificate

active

06996320

ABSTRACT:
The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.

REFERENCES:
patent: 3791714 (1974-02-01), Maurer
patent: 4962065 (1990-10-01), Brown et al.
patent: 5062680 (1991-11-01), Imamura et al.
patent: 5264724 (1993-11-01), Brown et al.
patent: 5343544 (1994-08-01), Boyd et al.
patent: 5694513 (1997-12-01), Okaniwa
patent: 5872387 (1999-02-01), Lyding et al.
patent: 5972765 (1999-10-01), Clark et al.
patent: 5979188 (1999-11-01), Ojha
patent: 6077791 (2000-06-01), DeTar
patent: 6229949 (2001-05-01), Ido et al.
patent: 6306563 (2001-10-01), Xu et al.
patent: 6341190 (2002-01-01), Summersgill et al.
patent: 6393185 (2002-05-01), Deacon
patent: 6499318 (2002-12-01), Lemaire et al.
patent: 6678452 (2004-01-01), Bloechl et al.
patent: 0 673 895 (1995-09-01), None
patent: 09-078244 (1997-03-01), None
patent: WO 01/64594 (2001-09-01), None
Arnoldbik et al., “Dynamic Behavior of Hydrogen in Silicon Nitride and Oxynitride Films Made by Low-Pressure Chemical Vapor Deposition”, The American Physical Society, Physical Review B, vol. 48, No. 8, Aug. 15, 1993, pp. 5444-5456.
Bogatyrjov et al., “Passive Selective Filter for Flattening the Erbium-Doped Fibre Amplifier Gain Spectrum Based on a Feature of the Silicon Oxynitride Fibre Absorption Spectrum”, Electronics Letters, vol. 31, No. 1, Jan. 5, 1995, pp. 61-62.
Bona et al., “Wavelength Division Multiplexed Add/Drop Ring Technology in Corporate Backbone Networks”, Optical Engineering, vol. 37, No. 12, Dec. 1998, pp. 3218-3228.
Bosseboeuf and Bouchier, “Mechanisms of Reactive Ion-Beam Sputtering of Silicon Nitride in Presence of15N- or D-Labeled Ammonia,” J. Electrochem. Society, vol. 133, No. 4, Apr. 1986, pp. 810-816.
Cavallari et al., “Plasma Processing for Silicon Oxynitride Films”, J. Electrochem. Soc., vol. 134, No. 5, May 1987, pp. 1265-1270.
Denisse et al., “Annealing of Plasma Silicon Oxynitride Films”, J. Appl. Phys., vol. 60, No. 7, Oct. 1, 1986, pp 2543-2547.
German et al., “Silicon-oxynitride Layers for Optical Waveguide Applications,”Electrochemical Society Proceedings, vol. 99-6.
Habraken et al., “Hydrogen in low-pressure chemical-vapor-deposited silicon (oxy)nitride films,”J. Appl. Phys., Jan. 15, 1986, vol. 59, No. 2.
Habraken et al., “Hydrogen in Low-Pressure Chemical-Vapor-Deposited Silicon (Oxy)Nitride Films”, J. Appl. Phys. vol. 59, No. 2, Jan. 15, 1986, pp. 447-453.
He et al., “Hydrogen Behavior in PECVD Nitride by SiH4& ND3During RTA,” Mat. Res. Soc. Symp. Proc., vol. 424, Apr. 8-12, 1996, San Francisco, CA pp. 109-114.
Hubner, “Strong Bragg Gratings Induced with 248 nm Light in Buried Silicon Exynitride Waveguides,” XP-000987165.
Ohring, “The Materials Science of Thin Films”, 1992, pp. 181-184.
Speakman et al., “Characterization of PECVD Deposited Silicon Oxynitride Thin Films”, Vacuum, vol. 38, No. 3, 1988, pp. 183-188.
Spühler et al., “A Very Short Planar Silica Spot-Size Converter Using a Nonperiodic Segmented Waveguide”, J. Lightwave Tech., vol. 16, No. 9, Sep. 1998, pp. 1680-1685.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Using deuterated source gases to fabricate low loss GeSiON... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Using deuterated source gases to fabricate low loss GeSiON..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Using deuterated source gases to fabricate low loss GeSiON... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3665657

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.