Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating
Reexamination Certificate
2011-06-07
2011-06-07
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having a perfecting coating
C438S033000, C438S068000, C438S113000, C438S114000, C438S458000, C438S460000, C438S462000
Reexamination Certificate
active
07955955
ABSTRACT:
A semiconductor product comprises a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip. The semiconductor substrate has a top surface and a perimeter. A barrier is formed in the chip within the perimeter. An Ultra Deep Isolation Trench (UDIT) is cut in the top surface of the chip extending down therein between the perimeter and the barrier. A ILD structure with low-k pSICOH dielectric and hard mask layers is formed over the substrate prior to forming the barrier and the UDIT. The ILD structure interconnection structures can be recessed down to the substrate aside from the UDIT.
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Farooq Mukta G.
Hannon Robert
Lane Michael W.
Liu Xiao Hu
Melville Ian D. W.
International Business Machines - Corporation
Jones II Graham S.
Percello Louis J.
Pham Thanh V
Trepp Robert M.
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