Using ARL to decrease EPD noise in CMP process

Details Using ARL to decrease EPD noise in CMP process Using ARL to decrease EPD noise in CMP process

1998-12-30

2001-11-13

Gulakowski, Randy (Department: 1746)

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

C216S088000, C430S950000, C438S007000, C438S016000

Reexamination Certificate

active

06315917

ABSTRACT:

CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application Ser. No. 87115816, filed Sep. 23, 1998, the full disclosure of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of decreasing endpoint detection noise in a chemical-mechanical polishing process. More particularly, the present invention relates to a method of decreasing endpoint detection noise in a chemical-mechanical polishing process by using anti-reflective layer.
2. Description of the Related Art
Chemical-mechanical polishing is the only technique capable of providing the global planarization in VLSI process, and even in ULSI process.
A reflectometer or a spectometer is used as an end point detector in a chemical-mechanical polishing process. However, it is difficult to detect the end point when the incident light is reflected by the different material layers because the reflected lights of the different material layers interfere with each other.
FIG. 1
is a schematic, cross-sectional diagram used to depict the effect of the reflected light on end point detector in a chemical-mechanical polishing process.
A patterned material layer
12
is formed on a provided substrate
10
. The material layer
12
having an opening
16
is formed by photolithographic etching. The opening
16
exposes the substrate
10
. A thick material layer
14
is formed on the material layer
12
and fills the opening
16
. The material of the material layer
12
and the material layer
14
are different. Chemical-mechanical polishing is performed to planarize the material layer
14
. When an incident light I
0
from the end point detector such as a reflectometer or a spectometer irradiates the different material layers, different reflected lights are produced.
As shown in
FIG. 1
, the reflected light I
1
is produced when the incident light I
0
irradiates the material layer
12
. The reflected light I
2
is produced while the incident light I
0
irradiates the substrate
10
exposed by the opening
16
. During a chemical-mechanical polishing process, the end point is verified by using the reflected lights. The choice of the reflected lights is based on the material of the material layer
14
. If the end point is verified by the change of the intensity of the reflected light I
1
, the reflected light I
2
interferes with the reflected light I
1
. Similarly, if the end point is verified by the change in the intensity of the reflected light I
2
, the reflected light I
1
interferes with the reflected light I
2
.
SUMMARY OF THE INVENTION
Accordingly, the present invention provides a method for decreasing endpoint detection noise in a chemical-mechanical polishing process by using an anti-reflective layer.
To achieve these and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, the invention provides a method for decreasing endpoint detection noise in a chemical-mechanical polishing process. The method for decreasing endpoint detection noise in a chemical-mechanical polishing process includes following steps. An anti-reflective layer is formed on a provided substrate, wherein the reflection light of the substrate interferes with the incident light. A patterned first material layer and a second material layer are formed in sequence on the anti-reflective layer. Chemical-mechanical polishing is performed to planarize the second material layer. A detector is used to verify the end point.
To achieve these and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, the invention provides another method for decreasing endpoint detection noise in a chemical-mechanical polishing process. The method for decreasing endpoint detection noise in a chemical-mechanical polishing process includes following steps. An anti-reflective layer is formed on a metal layer, wherein the reflection light of the metal layer interferes with the incident light. An opening is formed in the anti-reflective layer and the metal layer. A material layer is formed on the anti-reflective layer and fills the opening. Chemical-mechanical polishing is performed to planarize the second material layer. A detector is used to verify the end point.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.


REFERENCES:
patent: 5461007 (1995-10-01), Kobayashi
patent: 5767013 (1998-06-01), Park et al.
patent: 6010538 (2000-01-01), Sun et al.
patent: 6028669 (2000-02-01), Tzeng
patent: 6068539 (2000-05-01), Bajaj et al.
patent: 6071177 (2000-06-01), Lin et al.

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