Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2005-02-01
2005-02-01
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S736000, C257S737000, C257S738000, C438S612000, C438S613000, C438S614000
Reexamination Certificate
active
06849944
ABSTRACT:
In one embodiment, an integrated circuit package includes a die associated with an integrated circuit and a die pad. The die has a bottom surface, and the pad has a top surface opposite the bottom surface of the die. Two or more bump pad traces are each coupled to the top surface of the pad, and one or more other traces are each coupled to the top surface of the pad in a corresponding inter-bump pad region between adjacent bump pad traces. A number of solder bumps each couple the die to the pad at a corresponding bump pad trace to provide electrical connectivity between circuitry associated with the die and circuitry associated with the die pad. Each inter-bump pad region is free from any solder mask material deposited to control collapse of the die towards the pad during a reflow process for bonding the die to the pad using the bumps, a supporting structure that contacts the die during the reflow process having been used instead.
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patent: 6507121 (2003-01-01), Huang
Chauhan Satyendra S.
Murtuza Masood
Venkateswaran Muthiah
Brady W. James
Lee Hsien-Ming
Swayze, Jr. W. Daniel
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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