Using a suggested solution to speed up a process for...

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C703S014000, C716S100000, C716S118000, C716S119000, C716S139000

Reexamination Certificate

active

07987084

ABSTRACT:
One embodiment of the invention provides a system for speeding up an iterative process that simulates and, if necessary, corrects a layout of a target cell within an integrated circuit so that a simulated layout of the target cell matches a desired layout for the target cell. The system operates by determining if the target cell is similar to a preceding cell for which there exists a previously calculated solution. If so, the system uses the previously calculated solution as an initial input to the iterative process that produces the solution for the target cell.

REFERENCES:
patent: 5182718 (1993-01-01), Harafuji et al.
patent: 5432714 (1995-07-01), Chung et al.
patent: 5533148 (1996-07-01), Sayah et al.
patent: 5538815 (1996-07-01), Oi et al.
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5657235 (1997-08-01), Liebmann et al.
patent: 5682323 (1997-10-01), Pasch et al.
patent: 5696693 (1997-12-01), Aubel et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 5885734 (1999-03-01), Pierrat et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 6009250 (1999-12-01), Ho et al.
patent: 6009251 (1999-12-01), Ho et al.
patent: 6011911 (2000-01-01), Ho et al.
patent: 6014456 (2000-01-01), Tsudaka
patent: 6064806 (2000-05-01), Lakos et al.
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6081658 (2000-06-01), Rieger et al.
patent: 6154563 (2000-11-01), Tsudaka
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249597 (2001-06-01), Tsudaka
patent: 6289499 (2001-09-01), Rieger et al.
patent: 6298473 (2001-10-01), Ono et al.
patent: 6339836 (2002-01-01), Eisenhofer et al.
patent: 6370679 (2002-04-01), Chang et al.
patent: 6453452 (2002-09-01), Chang et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 2002/0010904 (2002-01-01), Ayres
patent: 2002/0100004 (2002-07-01), Pierrat et al.
patent: 2002/0152449 (2002-10-01), Lin
patent: 2002/0152454 (2002-10-01), Cote et al.
patent: 2324169 (1998-10-01), None
patent: 3-80525 (1991-04-01), None
patent: WO 97/38381 (1997-10-01), None
patent: WO 99/14636 (1999-03-01), None
patent: WO 99/14637 (1999-03-01), None
patent: WO 99/14638 (1999-03-01), None
patent: WO 00/67074 (2000-11-01), None
patent: WO 0067074 (2000-11-01), None
patent: WO 02/29491 (2002-04-01), None
Stirniman, J., et al., “Wafer Proximity Correction and Its Impact on Mask-Making”, Bacus News, vol. 10, Issue 1, pp. 1, 3-7, 10-12, Jan. 1994.
Henderson, R., et al., “Optical Proximity Effect Correction: An Emerging Technology”, Microlithography World, pp. 6-12 (1994).
Barouch, E., et al., “OPTIMASK: An OPC Algorithm for Chrome and Phase-Shift Mask Design”, SPIE, Vo. 2440, pp. 192-206, Feb. 1995.
Yen, A., et al., “Characterization and Correction of Optical Proximity Effects in Deep-Ultraviolet Lithography Using Behavior Modeling”, J. Vac. Sci. Technol. B, vol. 14, No. 6, pp. 4175-4178, Nov./Dec. 1996.
Morimoto, H., et al., “Next Generation Mask Strategy—Technologies are Ready for Mass Production of 256MDRAM?”, SPIE, vol. 3236, pp. 188-189 (1997).
Park, C., et al., “An Automatic Gate CD Control for a Full Chip Scale SRAM Device”, SPIE, vol. 3236, pp. 350-357 (1997).
Dolainsky, C., et al., “Application of a Simple Resist Model to Fast Optical Proximity Correction”, SPIE, vol. 3051, pp. 774-780 (1997).
Tsujimoto, E., et al., “Hierarchical Mask Data Design System (PROPHET) for Aerial Image Simulation, Automatic Phase-Shifter Placement, and Subpeak Overlap Checking”, SPIE, vol. 3096, pp. 163-172 (1997).
Yamamoto, K., et al., “Hierarchical Processing of Levenson-Type Phase Shifter Generation”, Jpn. J. Appl. Phys., vol. 36, Part 1, No. 12B, pp. 7499-7503, Dec. 1997.
Chuang, H., et al., “Practical Applications of 2-D Optical Proximity Corrections for Enhanced Performance of 0.25um Random Logic Devices”, IEEE, pp. 18.7.1-18.7.4, Dec. 1997.
Asai, N., et al., “Proposal for the Coma Aberration Dependent Overlay Error Compensation Technology”, Jpn. J. Appl. Phys., vol. 37, pp. 6718-6722 (1998).
Cobb, N. et al. “Fast Low-Complexity Mask Design”, SPIE, vol. 2440, pp. 313-327, Feb. 22-24, 1995.
Cobb, N. et al. “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model”, SPIE, vol. 3051, pp. 458-468, Mar. 12-14, 1997.
Cobb, N. “Fast Optical and Process Proximity Correction Algorithms for Integrated Circuit Maufacturing”, Dissertation, University of California at Berkeley, UMI Microform 9902038 (139 pages) 1998.
Toublan, O. et al. “Phase Aware Proximity Correction for Advanced Masks”, SPIE, vol. 4000, pp. 160-170, Mar. 1-3, 2000.
Anonymous, “Parameterization for Full Shape and Rule Dependent Dissection” IPCOM000009587D, Sep. 4, 2002 (9 pages).
Ackmann, P., et al., “Phase Shifting and Optical Proximity Corrections to Improve CD Control on Logic Devices in Manufacturing for Sub 0.35 um I-Line”, SPIE, vol. 3051, pp. 146-153, Mar. 12-14, 1997.
Lithas, “Lithas: Optical Proximity Correction Software” (2 pages). No date.
Precim, “Proxima System”, Precim Company, Portland, Oregon (2 pages). No date.
Precim, “Proxima Wafer Proximity Correction System”, Precim Company, Portland, Oregon (2 pages). No date.
Rieger, M., et al., “Mask Fabrication Rules for Proximity-Corrected Patterns”, Precim Company, Portland, Oregon (10 pages). No date.
Rieger, M., et al., “Using Behavior Modeling for Proximity Correction”, Precim Company, Portland, Oregon (6 pages).
Cobb, et al., “Fast Sparse Aerial Image Calculation for OPC”, SPIE, vol. 2621, pp. 534-544, Sep. 20-22, 1995.
Lucas, K., et al., “Model Based OPC for 1st Generation 193nm Lithography”, Motorola Inc., IDT assignee to IMEC (12 pages). No date.
Stirniman, J., et al., “Quantifying Proximity and Related Effects in Advanced Wafer Processes”, Precim Compnay, Hewlett Packard Labs (9 pages) No date.
Sugawara, M., et al., “Practical Evaluation of Optical Proximity Effect Correction by EDM Methodology”, Sony Corporation (11 pages). No date.
Saleh, B., et al., “Reduction of Errors of Microphotographic Reproductions by Optimal Corrections of Original Masks”, Optical Engineering, vol. 20, No. 5, pp. 781-784, Sep./Oct. 1981.
Fu, C.C., et al., “Enhancement of Lithographic Patterns by Using Serif Features”, IEEE, Transactions on Electron Devices, vol. 38, No. 12, pp. 2599-2603, Dec. 1991.
Harafuji, K., et al., “A Novel Hierarchical Approach for Proximity Effect Correction in Electron Beam Lithography”, IEEE, vol. 12, No. 10, pp. 1508-1514, Oct. 1993.
Rieger, M., et al., “System for Lithography Proximity Compensation”, Precim Company, Portland, Oregon, Sep. 1993 (28 pages).
Galan, G., et al., “Application of Alternating-Type Phase Shift Mask to Polysilicon Level for Random Logic Circuits”, Jpn. J. Appl. Phys., vol. 33, pp. 6779-6784 (1994).
Stirniman, J., et al., “Fast Proximity Correction with Zone Sampling”, SPIE, vol. 2197, pp. 294-301 (1994).
Stirniman, J., et al., “Optimizing Proximity Correction for Wafer Fabrication Processes”, SPIE, Photomask Technology and Management, vol. 2322, pp. 239-246 (1994).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Using a suggested solution to speed up a process for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Using a suggested solution to speed up a process for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Using a suggested solution to speed up a process for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2701349

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.