Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-02-22
1985-10-22
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 29578, 148 15, 148187, 148188, H01L 2182, H01L 2190
Patent
active
045479593
ABSTRACT:
An integrated circuit is made that includes an insulated gate transistor and a buried contact. The buried contact is used to divide an active device area in two discrete parts, that are doped during source-drain doping in other active device mesas of the integrated circuit. Discrete contacts to these regions, along with the buried contact, provide an additional type of electrical component in the integrated circuit, such as a bipolar lateral transistor.
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Auyane Hunter L.
General Motors Corporation
Hearn Brian E.
Wallace Robert J.
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