Use of vanadium oxide in microbolometer sensors

Electrical resistors – Resistance value responsive to a condition – Photoconductive

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25037014, 250334, 250250, 338 14, 338 22R, 343700MS, H01L 3108, H01C 700, G02B 2610

Patent

active

RE0366153

ABSTRACT:
In a microbolometer infrared radiation sensor, a detector material (VO.sub.2) having a high thermal coefficient of resistance to increase the sensitivity of the apparatus.

REFERENCES:
patent: 3484611 (1969-12-01), Futaki
patent: 3619614 (1971-11-01), Yamaka
patent: 3629585 (1971-12-01), Desvignes et al.
patent: 3693011 (1972-09-01), DeVaux et al.
patent: 3801949 (1974-04-01), Larrabee
patent: 3851174 (1974-11-01), Tynan et al.
patent: 3896309 (1975-07-01), Halsor et al.
patent: 4009516 (1977-03-01), Chiang et al.
patent: 4029962 (1977-06-01), Chapman
patent: 4067104 (1978-01-01), Tracy
patent: 4115692 (1978-09-01), Belcerak et al.
patent: 4169273 (1979-09-01), Hendrickson
patent: 4239312 (1980-12-01), Myer et al.
patent: 4286278 (1981-08-01), Lorenze et al.
patent: 4317126 (1982-02-01), Gragg
patent: 4354109 (1982-10-01), Gelpey et al.
patent: 4365106 (1982-12-01), Pulvari
patent: 4378489 (1983-03-01), Chabinsky et al.
patent: 4463493 (1984-08-01), Momose
patent: 4472239 (1984-09-01), Johnson et al.
patent: 4654622 (1987-03-01), Foss et al.
patent: 4691104 (1987-09-01), Murata et al.
patent: 4750834 (1988-06-01), Fateley
patent: 4803360 (1989-02-01), Ball et al.
patent: 5017784 (1991-05-01), Sher et al.
patent: 5455421 (1995-10-01), Spears
E. Bassous, Fabrication of Novel Three Dimensional Microstructures by the Anisotropic Etching of(100) and (110) Silicon, 10 IEEE Transactions on Electron Devices, 1178-1185, 1978 (FF).
Kurt E. Peterson, Dynamic Micromechanics on Silicon: Techniques and Devices, 10, IEEE Transactions on Electron Devices, 1241-1250, 1978.
Kurt Peterson & Anne Shartel, Micromechanical Accelerometer Integrated with MOS Detection Circuitry, IBM Research Facility, 1980.
H. Elabd & W.F. Kosonocky, Theory and Measurements of Photoresponse for Thin Film Pd.sub.2 Si and PtSi Infrared Schottky-Barrier Detectors with Optical Cavity, 43 RCA Review, 569-588, 1982.
K.C. Liddiard, Thin Film Resistance Bolometer IR Detectors, Infrared Phys., vol. 24, No. 1, 57-64, 1984.
M. Okuyama, et al., Si-Monolithic Integrated Pyroelectric Infrared Sensor Using PbTiO.sub.3 Thin Film, 6. International Journal of Infrared and Millimeter Waves, 71-78, 1985.
W.F. Kosonosky, et al., 160 .times.244 Element PtSi Schottky-Barrier IR-CCD Image Sensor, vol. Ed-32, No. 8, IEEE Transactions on Electron Devices, 1564-1573, Aug., 1985.
K.C. Liddiard, Thin-Film Resistance Bolometer IR Detectors--II, Infrared Phys., vol. 26, No. 1, 43-49, 1986.
Suzuki, et al, An Infrared Detector Using Poly-Silicon p-n Junction Diode, Tech Digest of 9th Sensor Symposium, 71-74, 1990.
A. Tanaka, et al., Infrared Linear Image Sensor using a Poly-Si pn Junction Diode Array, 33 Infrared Phys., 229-236, 1992.

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