Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1997-07-18
1999-01-12
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257572, 257576, 257587, 257598, 257571, 257588, 257621, 257520, 438666, 438667, H01L 2900
Patent
active
058594698
ABSTRACT:
A semiconductor device having the base and collector surrounded by a continuous tungsten filled slot as ground plane. The portion of the tungsten filled slot over the buried layer extends beyond the surface of the buried layer and the portion of the tungsten filled slot not over the buried layer extends beyond the interface between the epitaxial layer and the substrate.
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Abraham Fetsum
Advanced Micro Devices , Inc.
Nelson H. Donald
Thomas Tom
LandOfFree
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