Use of supercritical fluid to dry wafer and clean lens in...

Details Use of supercritical fluid to dry wafer and clean lens in... Use of supercritical fluid to dry wafer and clean lens in...

2007-08-28

2007-08-28

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C359S642000, C430S311000, C430S395000, C430S313000

Reexamination Certificate

active

11173257

ABSTRACT:
Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from the immersion space; charging the immersion space with a supercritical fluid; removing the supercritical fluid from the immersion space; and charging the immersion space with immersion liquid.

REFERENCES:
patent: 5879866 (1999-03-01), Starikov et al.
patent: 5900354 (1999-05-01), Batchelder
patent: 6309809 (2001-10-01), Starikov et al.
patent: 2002/0163629 (2002-11-01), Switkes et al.
patent: 2003/0123040 (2003-07-01), Almogy
patent: 2003/0174408 (2003-09-01), Rostalski et al.
International Search Report for PCT/US2006/024765 dated Jan. 16, 2007.

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