Use of scatterometry as a control tool in the manufacture of...

Details Use of scatterometry as a control tool in the manufacture of... Use of scatterometry as a control tool in the manufacture of...

2005-04-12

2005-04-12

Turner, Samuel A. (Department: 2877)

Optics: measuring and testing

Dimension

C250S559440, C430S005000

Reexamination Certificate

active

06879406

ABSTRACT:
One aspect of the present invention relates to a system and method for controlling an EUV mask fabrication process using a scatterometer. The system includes an EUV mask fabrication system comprising a translucent substrate having one or more layers of reflective material formed thereon and a patterned photoresist layer as the uppermost layer, a mask inspection system operatively connected to the mask fabrication system for examining the layers as they are being etched and developed by the mask fabrication system and generating data related thereto, and an EUV mask fabrication control system coupled to the mask inspection system for receiving data from the inspection system in order to regulate the mask fabrication system to facilitate obtaining desired critical dimensions. The method involves monitoring the etching of the features, generating data related to the features, and relaying the data to a control system to optimize the EUV mask fabrication process.

REFERENCES:
patent: 6013399 (2000-01-01), Nguyen
patent: 6042995 (2000-03-01), White
patent: 6327033 (2001-12-01), Ferguson et al.
patent: 6608321 (2003-08-01), La Fontaine et al.
patent: 6654660 (2003-11-01), Singh et al.
patent: 6673520 (2004-01-01), Han et al.
patent: 6738135 (2004-05-01), Underwood et al.

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