Use of polysilicon for smoothing of liquid crystal MOS displays

Details Use of polysilicon for smoothing of liquid crystal MOS displays Use of polysilicon for smoothing of liquid crystal MOS displays

1980-11-24

1983-05-10

Corbin, John K.

G02F 1135

Patent

active

043826580

ABSTRACT:
In a liquid crystal imaging display comprising a liquid crystal layer formed over the top surface of a MOS integrated circuit, the reflectivity of the pixel control electrodes is enhanced by means of a polycrystalline silicon layer formed over the MOS integrated circuit and polished to have an optically smooth surface over which the pixel control electrodes and the liquid crystal may be placed. Contrast ratios on the order of 100 to 1 are achieved.

REFERENCES:
patent: 3862360 (1975-01-01), Dill et al.
patent: 4191454 (1980-03-01), Braatz et al.
patent: 4239346 (1980-12-01), Lloyd

Affiliated with

Also associated with

Rating

Use of polysilicon for smoothing of liquid crystal MOS displays does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of polysilicon for smoothing of liquid crystal MOS displays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of polysilicon for smoothing of liquid crystal MOS displays will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-524164