Use of polymer spacers for the fabrication of shallow trench iso

Details Use of polymer spacers for the fabrication of shallow trench iso Use of polymer spacers for the fabrication of shallow trench iso

1997-10-20

1998-09-01

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438701, 438978, 148DIG161, 148DIG50, H01L 2176

Patent

active

058010831

ABSTRACT:
A method for forming insulator filled, shallow trench isolation regions, with rounded corners, has been developed. The process features the use of a polymer coated opening, in an insulator layer, used as a mask to define the shallow trench region in silicon. After completion of the shallow trench formation the polymer spacers are removed, exposing a region of unetched semiconductor, that had been protected by the polymer spacers, during the shallow trench dry etching procedure. The sharp corner, at the intersection between the shallow trench and the unetched region of semiconductor, is then converted to a rounded corner, via thermal oxidation of exposed silicon surfaces. The polymer spacers also eliminate the top corner wraparound.

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patent: 5670401 (1997-09-01), Tseng
patent: 5683908 (1997-11-01), Miyashita
patent: 5719085 (1998-02-01), Moon et al.

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