Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-07-17
2007-07-17
Geyer, Scott B. (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S171000, C438S238000, C257SE21011
Reexamination Certificate
active
11306272
ABSTRACT:
Deposition of a metal-containing reagent solution or suspension onto a conductive substrate by various pad-printing techniques is described. The result in a pseudocapacitive oxide coating, nitride coating, carbon nitride coating, or carbide coating having an acceptable surface area for incorporation into an electrolytic capacitor, such as one have a tantalum anode.
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Eberhard Douglas
Muffoletto Barry
Neff Wolfram
Seitz Keith
Shah Ashish
Geyer Scott B.
Greatbatch Ltd.
Lee Kyoung
Scalise Michael F.
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