Use of plasma polymerized organosilicon films in fabrication of

Details Use of plasma polymerized organosilicon films in fabrication of Use of plasma polymerized organosilicon films in fabrication of

1982-12-23

1985-01-15

Lusignan, Michael R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 88, 427 96, 430314, 156643, 204192E, B05D 306

Patent

active

044938551

ABSTRACT:
Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

REFERENCES:
patent: 2257177 (1941-09-01), Luster
patent: 3262808 (1966-07-01), Crooks et al.
patent: 3287242 (1966-11-01), Tobin et al.
patent: 3310424 (1967-03-01), Wehner et al.
patent: 3632386 (1972-01-01), Hurst
patent: 3686018 (1972-08-01), Lindblom et al.
patent: 3702833 (1972-11-01), Rose et al.
patent: 3732158 (1971-01-01), Przybyszewski et al.
patent: 3822928 (1974-07-01), Smolinsky et al.
patent: 3847652 (1974-11-01), Fletcher et al.
patent: 3867216 (1975-02-01), Jacob
patent: 3873361 (1975-03-01), Franco et al.
patent: 3912461 (1975-10-01), Wakefield
patent: 3948820 (1976-04-01), Reynard et al.
patent: 3953115 (1976-04-01), French et al.
patent: 3971684 (1976-07-01), Muto
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4004044 (1977-01-01), Franco et al.
patent: 4013463 (1977-03-01), Leder
patent: 4013532 (1977-03-01), Cormia et al.
patent: 4018945 (1977-04-01), Mehalso
patent: 4026742 (1977-05-01), Fujino
patent: 4035276 (1977-07-01), Havas et al.
patent: 4085248 (1978-04-01), Zehender et al.
patent: 4091166 (1978-05-01), Kubacki
patent: 4137330 (1979-01-01), Prichard
patent: 4137365 (1979-01-01), Wydeven et al.
patent: 4138306 (1979-02-01), Niwa
patent: 4163725 (1979-08-01), Sano et al.
patent: 4202914 (1980-05-01), Havas et al.
patent: 4212719 (1980-07-01), Osada et al.
patent: 4226896 (1980-10-01), Coburn et al.
patent: 4260647 (1981-04-01), Wang et al.
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4279723 (1981-07-01), Osada et al.
patent: 4292397 (1981-09-01), Takeuchi et al.
patent: 4371407 (1983-02-01), Kurosawa
patent: 4382985 (1983-05-01), Hattori et al.

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