Use of plasma polymerized organosilicon films in fabrication of

Details Use of plasma polymerized organosilicon films in fabrication of Use of plasma polymerized organosilicon films in fabrication of

1984-11-05

1986-07-08

Beck, Shrive P.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 41, 427 88, 430314, 156643, B05D 306

Patent

active

045992436

ABSTRACT:
Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

REFERENCES:
patent: 4004044 (1977-01-01), Franco et al.
patent: 4202914 (1980-05-01), Havas et al.

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