Use of phosphine and arsine compounds in chemical vapor depositi

Details Use of phosphine and arsine compounds in chemical vapor depositi Use of phosphine and arsine compounds in chemical vapor depositi

1990-03-23

1992-06-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437105, 437107, 437959, 156606, 156613, H01L 2120

Patent

active

051206765

ABSTRACT:
A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.

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Speckman et al., "Alternatives to Arsine . . . Using Triethylarsenic," Appl. Phys. Lett., vol. 50, No. 11, Mar. 16, 1987, pp. 676-678.
Chen et al., "Use of Tertiary Butyl Arsine for GaAs Growth," Appl. Phys. Lett., vol. 50, No. 4, Jan. 26, 1987, pp. 218-220.
Ludowise et al., "Use of Column V Alkyls in Organometallic Vapor Phase Epitoxy (OMVPE)," SPIE, vol. 323, 1982, pp. 117-124.
Maury et al., . . . "Pyrolysis of Organometallic Precursors Usable in GaAs Vapor Phase Epitaxy," J. Crys. Growth, vol. 91, No. 1-2, 1988, pp. 105-110.

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