Use of oxide spacers formed by liquid phase deposition

Details Use of oxide spacers formed by liquid phase deposition Use of oxide spacers formed by liquid phase deposition

1995-08-24

1997-03-18

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437238, H01L 21336

Patent

active

056122390

ABSTRACT:
A process for manufacturing an LDD type of FET, based on the salicide process, is described. Said process does not lead to short circuits between the drain region and and the main body of the FET through the buried contact. The process is based on the use of Liquid Phase Deposition (LPD) as the method for growing the oxide layer from which the spacers are formed. Since oxide layers formed through LPD will deposit preferentially on silicon and silicon oxide surfaces relative to photoresist surfaces, the areas in which the LPD layer forms are readily controlled. This feature allows the buried contact layer to be replaced by an extended drain region which can be connected to other parts of the integrated circuit (by the salicide process) without the danger of shorting paths being formed therein.

REFERENCES:
patent: 5053349 (1991-10-01), Matsuoka
patent: 5270233 (1993-12-01), Hamatake
patent: 5286664 (1994-02-01), Horiuchi
patent: 5429956 (1995-07-01), Shell et al.

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