Use of oblique implantation in forming base of bipolar transisto

Details Use of oblique implantation in forming base of bipolar transisto Use of oblique implantation in forming base of bipolar transisto

1994-10-07

1997-02-25

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 35, 437909, 148DIG10, H01L 21265

Patent

active

056058497

ABSTRACT:
In fabricating a bipolar transistor, semiconductor dopant is introduced into a semiconductor body during a base doping operation to define a doped region, part of which constitutes a base region for the transistor. The base doping operation entails ion implanting the dopant into the body at a tilt angle of at least 15.degree. relative to the vertical. The minimum lateral base thickness and, when the base region abuts a slanted sidewall of a field insulating region, the minimum sidewall base thickness increase relative to the minimum vertical base thickness. As a result, the magnitude of the collector-to-emitter breakdown voltage typically increases. The minimum lateral, sidewall, and vertical base thicknesses vary with the tilt angle and base-implant energy in such a manner that the minimum lateral base thickness and the minimum sidewall base thickness are separately controllable from the minimum vertical base thickness.

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