Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1994-03-23
1997-04-01
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429803, 20429806, 20429808, 20429811, 20429819, 20429821, 20429822, 20429828, 20419212, 20419213, 20419222, C23C 1454, C23C 1434
Patent
active
056162251
ABSTRACT:
In one group of embodiments, two or more small anodes are spaced apart from one another in a magnetron, with some aspect of their electrical power being individually controlled in a manner to control a density profile across a plasma. In another group of embodiments, the same effect is obtained by mechanically moving one or more small anodes or anode masks. When used in a magnetron having either a rotating cylindrical cathode or a stationary planar cathode and designed to sputter films of material onto a substrate, the uniformity of the rate of deposition across the substrate is improved. Also, adverse effects of sputtering dielectric materials are reduced.
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Sieck "Effects of Anode Location on Deposition Profiles for Long Rotatable Magnetrons".
Newcomb Richard
Schulz Stephen C.
Sieck Peter A.
Trumbly Terry A.
Breneman R. Bruce
Draegert David A.
McDonald Rodney G.
Pace Salvatore P.
The BOC Group Inc.
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