Use of infrared radiation and an ellipsoidal reflection mirror

Details Use of infrared radiation and an ellipsoidal reflection mirror Use of infrared radiation and an ellipsoidal reflection mirror

1985-07-25

1989-02-21

Straub, Gary P.

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

118725, 156601, 156611, 156613, 156DIG73, 427 541, 427 55, 4272481, 4272551, C30B 3500, C30B 2302, C30B 2514

Patent

active

048063215

ABSTRACT:
In a semiconductor crystal growth apparatus, a growth vessel enclosing a substrate is evacuated to an ultrahigh vacuum, and gas molecules containing a component element of a semiconductor which should grow on the substrate is introduced according to a predetermined time sequence into the growth vessel from an external gas source. Infrared radiation from an infrared radiation emitting lamp associated with the growth vessel and controlled by a temperature control unit is directed toward and onto the substrate whose temperature is to be maintained at a predetermined setting. Crystal growth of one molecular layer after another can be achieved by the apparatus with dimensional accuracy of the thickness of a single molecular layer.

REFERENCES:
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patent: 3831029 (1974-08-01), Jones et al.
patent: 4018566 (1977-04-01), Zeuch et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4434025 (1984-02-01), Robillard
patent: 4558660 (1985-12-01), Hishizawa et al.
patent: 4565598 (1986-01-01), Seymour
Nishizawa, Japan Society of Applied Physics, vol. 53, No. 6, 6/84 Translation.
McGraw-Hill Dictionary of Scientific and Technical Terms, 3rd Ed., N.Y., 1984, p. 1301.
Guro et al., Sov. Phys., No. 11 (1978), pp. 22-26.
Moore, Walter J., Physical Chemistry, Third Edition, Prentice Hall, Englewood Cliffs, N.J., 1962, pp. 463-465.

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