Use of H.sub.2 O.sub.2 solution as a method of post lap cleaning

Details Use of H.sub.2 O.sub.2 solution as a method of post lap cleaning Use of H.sub.2 O.sub.2 solution as a method of post lap cleaning

1998-01-28

2000-05-16

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

510175, C03C 2300, C23G 100

Patent

active

060632054

ABSTRACT:
A method for post lapping cleaning of silicon wafers wherein the lapped wafer surfaces are cleaned and passivated by being treated with an aqueous hydrogen peroxide solution of about 0.5 to 2% by weight of hydrogen peroxide and then dried.

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Kern, Handbook of Semiconductor Wafer Cleaning Technology, 1993, p. 131.

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