Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly
Patent
1995-12-07
1998-10-27
Ramsey, Kenneth J.
Electric lamp or space discharge component or device manufacturi
Process
With assembly or disassembly
445 50, H01J 902
Patent
active
058270990
ABSTRACT:
Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.
REFERENCES:
patent: 3303085 (1967-02-01), Price et al.
patent: 3407125 (1968-10-01), Fehlner
patent: 3497929 (1970-03-01), Shoulders
patent: 3562881 (1971-02-01), Barrington et al.
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4008412 (1977-02-01), Yuito et al.
patent: 4338164 (1982-07-01), Spohr
patent: 4345181 (1982-08-01), Shelton
patent: 4407934 (1993-10-01), Kuchinsky et al.
patent: 4668957 (1987-05-01), Spohr
patent: 4732646 (1988-03-01), Elsner et al.
patent: 4874981 (1989-10-01), Spindt
patent: 4897338 (1990-01-01), Spicciati et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 5007873 (1991-04-01), Goronkin et al.
patent: 5019003 (1991-05-01), Chason
patent: 5053673 (1991-10-01), Tomii et al.
patent: 5129850 (1992-07-01), Kane et al.
patent: 5141460 (1992-08-01), Jaskie et al.
patent: 5142184 (1992-08-01), Kane
patent: 5150019 (1992-09-01), Thomas et al.
patent: 5150192 (1992-09-01), Greene et al.
patent: 5164632 (1992-11-01), Yoshida et al.
patent: 5170092 (1992-12-01), Tomii et al.
patent: 5188977 (1993-02-01), Stengl et al.
patent: 5194780 (1993-03-01), Meyer
patent: 5199917 (1993-04-01), Macdonald et al.
patent: 5199918 (1993-04-01), Kumar
patent: 5202571 (1993-04-01), Hirabayashi et al.
patent: 5211707 (1993-05-01), Ditchek et al.
patent: 5228877 (1993-07-01), Allaway et al.
patent: 5249340 (1993-10-01), Kane et al.
patent: 5252833 (1993-10-01), Kane et al.
patent: 5277638 (1994-01-01), Lee
patent: 5278475 (1994-01-01), Jaskie et al.
patent: 5458520 (1995-10-01), DeMercurio et al.
Huang, "200-nm Gated Field Emitters", IEEE Electron Device Letters, Mar. 1993, pp. 121-122.
Possin, "A Method for Forming Very Small Diameter Wires, " Rev. Sci. Instrum. , vol. 41, 1970, pp. 772-774.
Williams et al, "Fabrication of 80 .ANG.metal wires, "Rev. Sci. Instrum. , Mar. 1984, pp. 410-412.
Shiraki et al. "Perpendicular Magnetic Media by Anodic Oxidation Method and Their Recording Characteristics, " IEEE Trans. Maqs. , Sep. 1985, pp. 1465-1467.
Spohr, Ion Tracks and Microtechnology, Principles and Applications(Viewig) , edited by K. bethge, 1990, pp. 246-255.
Whitney et al, "Fabrication and Magnetic Properties of Arrays of Metallic Nanowires, "Science, 3 Sep. 1993, pp. 1316-1319.
Busta, "Vacuum Microelectronics-1992, " J. Micromech. Microeng., vol. 2, 1992, pp. 43-74.
Utsumi, "Keynote Address, Vacuum Microelectronics: What's New and Exciting, " IEEE Trans. Elect. Dev., Oct. 1990, pp. 2276 -2283.
Betsui, "Fabrication and Characteristics of Si Field Emitter Arrays, " Tech. Dig. IVMC 92, pp. 26-29.
Fischer et al, "Production and use of nuclear tracks: imprinting structure on solds, " Rev. Mod. Phys., Oct. 1983, pp. 907-948. Maqs., Sep. 1986, pp. 1140-1145.
Arai et al, "Magnetic Properties of Iron Electro-Deposited Alumite Films, " IEEE Trans. Maqs. , Sep. 1987,pp 2245-2247.
Cochran et al, "Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix, "J. Mater. Res., May./Jun. 1987, pp. 322-328.
Penner et al, "Preparation and Electrochemical Characterization of Ultramicroelectrode Ensembles," Anal. Chem., 1 Nov. 1987, pp. 2625-2630.
Chakarvarti et al, "morphology of etched pores and microstructures fabricated from nuclear track filters, " Nucl. Instr. & Meth. Phys. Res., vol. B62, 1991, pp. 209-215.
Kirkpatrick et al, "Vacuum field emission from a SiTaSi.sub.2 semiconductor-metaleutectic composite, " Appl. Phys., Lett., Oct. 1991, pp. 2094-2096.
Hill et al, "A low Voltage Field Emitter Array Cathode for High Frequency Applications, "Abstract 6.5, 5th Int'Vac. Microelec. Conf., 13-17 July 1992, 2 pp.
Sune et al, "Fabrication of Silicon-column-Field Emitters for Microwave Applications, "Tech. Dig., 6th Int'1 Vac. Microelec. Conf., 13-17 Jul. 1993, 2 pp. 15-16.
Chakarvarti et al, "microfabrication of metal-semiconductor heterostructures and tubules using nuclear track filtrs, "J. Micromech. Microenq., 1993, pp. 57-59.
Spindt et al. , "Research in micron-Size Field-Emission Tubes, " IEEE Conf. record of 1966 8th conf. on Tube Techniques, Sep. 20, 1966, 143-147.
Spindt et al., "Research in Micron-Size Field-Emission Tubes, " IEEE Conf. Record of 1966 8th Conf. on Tube Techniques, Sep. 20, 1966, pp. 143-147.
Spindt et al., "Physical Properties of Thin-film Field Emission Cathodes with Molybdenum cones, " Journal of Applied Physics,vol. 47, No. 12 Dec. 1976, pp. 5248-5263.
Duboc, Jr. Robert M.
Macaulay John M.
Searson Peter C.
Spindt Christopher J.
Candescent Technologies Corporation
Meetin Ronald J.
Ramsey Kenneth J.
LandOfFree
Use of early formed lift-off layer in fabricating gated electron does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Use of early formed lift-off layer in fabricating gated electron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of early formed lift-off layer in fabricating gated electron will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1609441