Use of double charge implant to improve retrograde process PMOS

Details Use of double charge implant to improve retrograde process PMOS Use of double charge implant to improve retrograde process PMOS

1994-04-05

1995-02-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 30, 437 45, 437 57, H01L 21265

Patent

active

053936795

ABSTRACT:
A semiconductor CMOS device on a silicon substrate doped with an N- dopant is manufactured by a process of forming a mask upon the substrate, forming field oxide structures upon the substrate through the mask, removing the mask, forming a sacrificial layer on the surface of the substrate between the field oxide structures, forming a P-well mask on the substrate for the NMOS portion of the device, implanting dopant ions to form an NMOS retrograde P-well through the P-well mask, performing an NMOS V.sub.T first implant of ions through the P-well mask into selected regions of the the substrate, performing a second V.sub.T implant of ions into the substrate, performing a PMOS punchthrough voltage implant of ions into the substrate, forming doped polysilicon gate structures, and forming doped source/drain regions.

REFERENCES:
patent: 4710477 (1987-12-01), Chen
patent: 4717683 (1988-01-01), Parillo
patent: 4761384 (1988-08-01), Neppl et al.

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