Use of doped silicon dioxide in the fabrication of solar cells

Details Use of doped silicon dioxide in the fabrication of solar cells Use of doped silicon dioxide in the fabrication of solar cells

2006-11-14

2006-11-14

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S073000, C136S243000, C136S249000, C136S252000, C257SE27124

Reexamination Certificate

active

07135350

ABSTRACT:
In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.

REFERENCES:
patent: 5217539 (1993-06-01), Fraas et al.
patent: 2004/0200520 (2004-10-01), Mulligan et al.

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