Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2006-05-23
2006-05-23
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S013000, C257S014000, C257S015000, C257S022000, C257S094000, C257S101000, C257S103000
Reexamination Certificate
active
07049641
ABSTRACT:
The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or deep-level-to-deep-level) to achieve useful results. A principal aspect of the invention involves devices in which electrical transport occurs through a band of deep-level states and just the conduction band (or through a deep-level band and just the valence band), but where significant current does not flow through all three bands. This means that the deep-state is not acting as a nonradiative trap, but rather as an energy band through which transport takes place. Advantageously, the deep-level energy-band may facilitate a radiative transition, acting as either the upper or lower state of an optical transition.
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A. Chantre, G. Vincent, D. Bois, Deep-level optic
Garrod D.
Tran Mai-Huong
Yale University
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