Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-03-14
1998-11-10
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257665, H01L 2702
Patent
active
058348247
ABSTRACT:
A novel antifuse includes a composite of conductive particles dispersed throughout a nonconductive matrix, which composite is located inside an antifuse via. The antifuse via is defined by a dielectric layer that separates two electrodes. The electrodes can be located in the same conductive layer plane (typically parallel to and isolated from one another) or in two different conductive planes (typically formed transverse to one another and separated by a dielectric with an antifuse via formed therein). The electrodes can be coupled to, for example, active or passive regions of the integrated circuit. One embodiment of an antifuse (also called "composite antifuse") has only the composite in an antifuse via between the two conductive layers. Another embodiment of an antifuse (also called "hybrid antifuse") includes in addition to the composite, one or more thin dielectric layers also located in the antifuse via between the two conductive layers.
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Chiang Steve S.
Shepherd William H.
Xie John Y.
Guay John
Jackson Jerome
MacPherson Alan H.
Prolinx Labs Corporation
Suryadevara Omkar K.
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