Use of cobalt tungsten phosphide as a barrier material for coppe

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 98, 427437, 4274431, 437192, 437195, 437230, B05D 512, B05D 118

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active

056958102

ABSTRACT:
A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.

REFERENCES:
patent: 4574095 (1986-03-01), Baum et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4894260 (1990-01-01), Kumasaka et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5240497 (1993-08-01), Shacham et al.
"Copper Interconnection with Tungsten Cladding for ULSI;" J.S.H. Cho et al.; VLSI Tech. Symp.; 1991; pp. 39-40.
"Encapsulated Copper Interconnection Devices Using Sidewall Barriers;" Donald S. Gardner et al.; 1991 VMIC Conference; Jun. 11-12, 1991; pp. 99-108.
"Planar Copper-Polyimide Back End Of The Line Interconnections For ULSI Devices;" B. Luther et al.; 1993 VMIC Conference; Jun. 8-9, 1993; pp. 15-21.
"Electroless Cu for VLSI;" James S.H. Cho et al.; MRS Bulletin/Jun. 1993; pp. 31-38.
"Electroless Copper Deposition on Metals and Metal Silicides;" Cecilia Y. Mak; MRS Bulletin/Aug. 1994; pp. 55-62.
"Development Of An Electroless Copper Deposition Bath for Via Fill Applications On TiN Seed Layers;" Roger Palmans et al.; Conf. Proc. ULSI-X; Materials Research Society; 1995; pp. 87-94.
"Selective and Blanket Electroless Cu Plating Initiated By Contact Displacement For Deep Submicron Via Contact Filling;" Dubin et al.; VMIC Conf.; Jun. 27-29, 1995; pp. 315-321.
"0.35 um Cu-Filled Via Holes By Blanket Deposited Electroless Copper On Sputtered Seed Layer;" Yosi Shacham-Diamand et al.; VMIC Conf.; Jun. 27-29, 1995; pp. 334-336.
"Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide;" Shi-Qing Wang; MRS Bulletin/Aug. 1994; pp. 30-40.
"Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing;" S.P. Murarka et al.; MRS Bulletin/Jun. 1993; pp. 46-51.
"Electrochemically Deposited Diffusion Barrier;" M. Paunovic; et al.; J. Electrochem. Soc., vol. 141 No. 7; Jul. 1994; pp. 1843-1850.
"Electroless Copper Deposition For Multilevel Metallization;" S. Simon Wong et al.; Mat. Res. Soc. Symp. Proc. vol. 203; 1991 Materials Research Society; pp. 347-356.
"Electroless plating of copper at a low pH level;" R. Jagannathan et al.; IBM J. Res. Develop. vol. 37 No. 2; Mar. 1993; pp. 117-123.
"Selective Electroless Metal Deposition for Integrated Circuit Fabrication;" Chiu H. Ting et al.; J. Electronchem. Soc. vol. 136, No.2; Feb. 1989; pp. 456-462.
"Selective Electroless Metal Deposition for Via Hole Filling in VLSI Multilevel Interconnection Structures;" Chiu H. Ting et al.; J. Electrochem. Soc., vol. 136. No. 2; Feb. 1989; pp. 462-466.
"Pd/Si plasma immersion ion implantation for selective electroless copper plating on SiO2;" M.-H. Kiang et al.; Appl. Phys. Lett. 60(22); Jun. 1,1992; pp. 2767-2769.
"Selective electroless Ni deposition on a TiW underlayer for integrated circuit fabrication;" V.M. Dubin et al.; Thin Solid Films, 226(1993); pp. 87-93.
"Copper Corrosion With and Without Inhibitors;" V. Brusic et al.; J. Electrochem. Soc., vol. 138, No. 8; Aug. 1991; pp. 2253-2259.
"100 nm wide copper lines made by selective electroless deposition;" Yosi Shacham-Diamand; J. Micromech. Microeng. 1 (1991); pp. 66-72.
"Passivation of Copper by Silicide Formation In Dilute Siland;" S. Hymes et al.; Conf. Proc. ULSI-VII, Materials Research Society; 1992; pp. 425-431.
"A Half-Micron Pitch Cu Interconnection Technology;" Kazuyoshi Ueno et al.; 1995 Symposium on VLSI Technology Digest of Technical Papers; 1995; pp. 27-28.
"Electroless Metal Deposition From Aqueous Solutions;" V.V. Sviridov; Minsk Bielorussian State University; 1987; pp. 60-85.

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