Use of alkylphosphines and alkylarsines in ion implantation

Details Use of alkylphosphines and alkylarsines in ion implantation Use of alkylphosphines and alkylarsines in ion implantation

1987-05-21

1988-01-26

Roy, Upendra

Fishing, trapping, and vermin destroying

357 91, 427 38, 437 18, 437930, H01L 21265

Patent

active

047216832

ABSTRACT:
Liquid alkylphosphines and alkylarsines are used as the ion source for improved ion implantation in the doping of semiconductor materials. A higher proportion of the total beam current is obtained as phosphorus and arsenic ion beam current in comparison with the use of gaseous phosphine and arsine, respectively, as the ion sources. Tertiarybutylphosphine and isobutylphosphine are the most preferred alkylphosphines, and tertiarybutylarsine is the most preferred alkylarsine for this use.

REFERENCES:
patent: 3909305 (1975-09-01), Boroffka et al.
patent: 3960605 (1976-06-01), Beck et al.
patent: 4187124 (1980-02-01), Muller et al.
patent: 4385946 (1983-05-01), Finegan et al.
Knoell et al, Jour. Appl. Phys. 57 (1985), 1322.
Miyaguchi et al, Jap. Jour. Appl. Phys. 22 (1983), L-225.
Ion-Implantation, ed. J. F. Ziegler, Academic Press, 1984, N.Y., pp. 621-627.

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