Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2004-07-22
2008-08-05
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257SE23179, C438S401000, C438S462000
Reexamination Certificate
active
07408265
ABSTRACT:
An alignment mark mask element protects an underlying alignment mark during subsequent processing of a fabrication substrate. The alignment mark mask element is formed concurrent with formation of a photomask from a dual-tone photoresist that exhibits a pattern reversal upon exposure to an energy level. A portion of the dual-tone photoresist above the alignment mark is exposed to an energy sufficient to reverse a positive tone resist to a negative tone, which remains above the alignment mark after developing. The remainder of the dual-tone photoresist is exposed through a reticle at a lesser energy level and patterned to define aperture locations of a photomask for formation of semiconductor device features. In addition, a photomask for use on a fabrication substrate and an intermediate semiconductor device are disclosed. Methods of forming a photomask and an intermediate semiconductor device structure are also disclosed.
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Holscher Richard D.
Niroomand Ardavan
Estrada Michelle
Micro)n Technology, Inc.
Stark Jarrett J
TraskBritt
LandOfFree
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