Use of a capping layer to attain low titanium-silicide sheet res

Details Use of a capping layer to attain low titanium-silicide sheet res Use of a capping layer to attain low titanium-silicide sheet res

1995-06-02

1997-01-14

Niebling, John

Fishing, trapping, and vermin destroying

437190, 437192, 437193, 437 46, H01L 2128

Patent

active

055939244

ABSTRACT:
A titanium-silicide process using a capping layer to reduce the silicide sheet resistance. A layer of titanium (20) is deposited. A react capping layer (22) may then be deposited to prevent contaminants from entering the titanium layer (20)during the subsequent react step. The layer of titanium (20) is then reacted to form titanium-silicide (32). The react capping layer (22) is then removed and an anneal capping layer (36) is deposited to prevent contaminants from entering the silicide layer (32) during the subsequent anneal step. Then, the silicide anneal is performed to accomplish to transformation to a lower resistivity phase of silicide. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.

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