Unstable resonator semiconductor laser

Details Unstable resonator semiconductor laser Unstable resonator semiconductor laser

1994-05-31

1995-08-01

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 318

Patent

active

054385857

ABSTRACT:
A semiconductor laser diode provides high optical power output in a single diffraction-limited farfield lobe using a conventional Fabry-Perot resonant cavity and a planar well graded index separate confinement heterostructure (QW-GRINSCH) active region. An antiguide region is optically coupled to the active region of the laser. In one embodiment, the antiguide region has a lateral variation in the effective index of refraction that forms a diverging medium that causes higher order optical modes to have higher losses in the resonant cavity. The waveguide medium preferably varies in thickness and the thickness approximates a parabolic function in the lateral direction. The antiguide region is enclosed by GaAs layers to minimize oxidation at material interfaces during device fabrication.

REFERENCES:
patent: 4335461 (1982-06-01), Streifer et al.
patent: 4393504 (1983-07-01), Botez
patent: 5159604 (1992-10-01), Mehuys et al.

Affiliated with

Also associated with

Rating

Unstable resonator semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Unstable resonator semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Unstable resonator semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-738629