Unpowered fast gate turn-off FET

Details Unpowered fast gate turn-off FET Unpowered fast gate turn-off FET

1982-06-21

1985-01-08

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307246, 307572, 307581, H03K 1704, H03K 17687

Patent

active

044928831

ABSTRACT:
A fast turn-off MOSFET circuit is provided by a JFET in the gate circuit of the MOSFET which is connected to the same gate drive terminal as the MOSFET. The JFET becomes conductive upon turn-off of the MOSFET due to removal of gate drive. Conduction of the JFET provides faster discharge therethrough of residual stored charge on the MOSFET gate, whereby to facilitate faster MOSFET turn-off. A zener diode is connected in the gating circuitry and has a greater breakover voltage than the pinch-off voltage of the JFET, such that during turn-on, gate drive first pinches OFF the JFET and then charges up the MOSFET gate to drive the MOSFET into conduction.

REFERENCES:
patent: 3819952 (1974-06-01), Enomoto et al.
patent: 3896367 (1975-07-01), Frantz
patent: 4020365 (1977-04-01), Weir
patent: 4266149 (1981-05-01), Yoshida

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