Universal memory element and method of programming same

Static information storage and retrieval – Floating gate – Multiple values

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365163, G11C 1100

Patent

active

059128399

ABSTRACT:
Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify said memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.

REFERENCES:
patent: 5166901 (1992-11-01), Shaw et al.

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