Universal apparatus for elaborating semiconductive monocrystals

Chemistry: physical processes – Physical processes – Crystallization

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Details

156617SP, 156620, B01J 1710, B01J 1718

Patent

active

039946908

ABSTRACT:
Universal apparatus for elaborating semiconductive monocrystals according to known methods, comprising a frame, a heating enclosure, heating means located in this enclosure and connected to an appropriate electric current generator, a vacuum system connected to the enclosure, means for admission of gases in the enclosure, and means for supporting, drawing and rotating the crystalline material during its elaboration. The heating enclosure is the same for all the methods inasmuch as the quantities of the crystalline material treated are comparable and comprises a cylindrical body fixed at a predetermined height to the frame for visual observation of the elaboration zone, the body being provided with two lateral flanges for ensuring the connection of the vacuum system or of an eventual generator of radiofrequency, and two caps, one lower cap and one upper cap, the caps being removably connected to the cylindrical body. The lower cap is provided with means for eventually supporting heating elements and further elements. The means for supporting, drawing and rotating, which differ completely or partly according to the used method, are constituted by modular units provided with identical assemblage means between themselves and with the caps of the enclosure in such a way as to permit the positioning above the upper cap and below the lower cap modular units suitable for the chosen method. At least one of the upper modular units is provided with means for providing its assembling with a first slide displaceable on guides provided on the frame, and at least one of the lower modular units is provided with means for providing its assembling with a second slide displaceable on the same guides. Each slide is provided with fixation means to a nut, the nut being activated by a main screw running along the guides of the frame and with accurate positioning means and locking means at predetermined spots of the guides.

REFERENCES:
patent: 2809905 (1957-10-01), Davis
patent: 2870309 (1959-01-01), Capita
patent: 3189415 (1965-06-01), Erneis
patent: 3216805 (1965-11-01), Erneis
patent: 3592611 (1971-07-01), Eder
patent: 3650701 (1972-03-01), Forrat
patent: 3692499 (1972-09-01), Andrychuk
Keck et al., Floating Zone Recrystallization of Silicon, The Rev. of Scien. Instr., vol. 25, No. 4, Apr., 1954, pp. 331 to 334.

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