Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1989-05-24
1990-12-18
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330 85, H03F 316
Patent
active
049789252
ABSTRACT:
A near unity gain, essentially zero-offset, high input impedance, relatively low output impedance, fast responding buffer circuit uses first and second essentially identical n-channel depletion mode MOS transistors with the drain-source circuitries serially connected together and with the gate and source of the second transistor connected together. A first feedback circuit, which uses a first n-channel enhancement mode MOS transistor as a voltage level shifter and a third n-channel depletion mode MOS transistor as a source follower, is connected between the source and drain of the first transistor. A second feedback circuit, which uses a second n-channel enhancement mode MOS transistor as a voltage level shifter and a fourth n-channel depletion mode MOS transistor as a source follower, is connected between the source and drain of the second transistor. The gate and source of the first transistor serve as the buffer input and output terminals, respectively.
REFERENCES:
patent: 4612514 (1986-09-01), Shigaki et al.
patent: 4714845 (1987-12-01), Devecchi et al.
Harris Corporation
Mottola Steven
Schanzer Henry I.
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