Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2007-12-28
2010-11-02
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257SE21014, C438S157000
Reexamination Certificate
active
07825437
ABSTRACT:
In general, in one aspect, a method includes forming N-diffusion and P-diffusion fins in a semiconductor substrate. A P-diffusion gate layer is formed over the semiconductor substrate and removed from the N-diffusion fins. A pass-gate N-diffusion gate layer is formed over the semiconductor substrate and removed from the P-diffusion fins and pull-down N-diffusion fins. A pull-down N-diffusion layer is formed over the semiconductor substrate.
REFERENCES:
patent: 2008/0128796 (2008-06-01), Zhu et al.
patent: 2009/0001464 (2009-01-01), Booth et al.
patent: 2009/0078997 (2009-03-01), Greene et al.
Datta Suman
Doyle Brian S.
Kavalieros Jack
Pillarisetty Ravi
Shah Uday
Gordon Matthew
Intel Corporation
Le Thao X
Ryder Douglas J.
Ryder, Lu, Mazzeo and Konieczny, LLC
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