Unitary silicon die module

Details Unitary silicon die module Unitary silicon die module

1993-05-04

1995-12-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With semiconductor element forming part

257717, 257730, H01L 3902

Patent

active

054731925

ABSTRACT:
A semiconductor chip module is formed by providing at least one semiconductor chip and a semiconductor substrate and bonding the semiconductor chip to the semiconductor substrate without the use of an epoxy or a metallic layer to create a bond between the semiconductor chip and the semiconductor substrate. The semiconductor chip of the semiconductor chip module is electrically connected to an external, electrical interconnection system. The semiconductor substrate has similar thermal properties to the semiconductor chip, this thermal mismatch present between a semiconductor chip and a metallic heatsink in conventional external, electrical interconnection systems is eliminated.

REFERENCES:
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4818323 (1989-04-01), d'Aragona et al.
patent: 5010036 (1991-04-01), Calviello et al.
patent: 5175613 (1992-12-01), Barker, III et al.
patent: 5198963 (1993-03-01), Gupta et al.
patent: 5206713 (1993-04-01), McGeary
Maszara, "Silicon-On-Insulator by Wafer Bonding: A Review", J. Electrochem. Soc., vol. 138, No. 1, pp. 341-347, 1991.

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