Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature
Patent
1992-06-10
1994-03-15
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Emitter region feature
257768, 257139, 257378, H01L 2348, H01L 2974, H01L 2976
Patent
active
052948161
ABSTRACT:
An emitter switched thyristor with base resistance control for preventing parasitic latch-up includes a P-N-P-N main thyristor with an N.sup.+ floating emitter for MOS-gated controlled turn-on and a lateral P-channel MOSFET for shunting hole current in a second base region to a P.sup.+ diverting region electrically connected to the cathode. The P-channel MOSFET is enabled by the application of a negative gate voltage to form a P-type inversion layer between the second base region and the P.sup.+ diverter region, thus reducing the resistance between the cathode and the second base region and raising the holding current of the emitter switched thyristor to above the operating current level. The formation of an alternative current path to the cathode has the further effect of reducing the forward bias across the base-emitter junction of an adjacent parasitic thyristor to thereby prevent the sustained regenerative action of the parasitic thyristor.
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Baliga Bantval J.
Nandakumar Mahalingam
Shekar Mallikarjunaswamy S.
Abraham Fetsum
North Carolina State University at Raleigh
Sikes William L.
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