Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-12-31
2000-07-04
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, H01L 21304
Patent
active
060838396
ABSTRACT:
The present invention is an improved apparatus and process for chemical mechanical polishing (CMP) layers which have a low dielectric constant (k). The present invention uses a magnetic slurry and a magnetic coil for polishing the wafer with the magnetic slurry. By using a magnetic slurry and a magnetic coil the force used during polishing can be controlled resulting greater control over the CMP process during the polishing of low k materials.
REFERENCES:
patent: 5575707 (1996-11-01), Talieh et al.
patent: 5750440 (1998-05-01), Vanell et al.
patent: 5865891 (1999-02-01), Linliu
Chen Kin-Chan
Intel Corporation
Utech Benjamin
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