Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Both semiconductors of the heterojunction are the same...
Reexamination Certificate
2011-08-23
2011-08-23
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Both semiconductors of the heterojunction are the same...
C257SE31061
Reexamination Certificate
active
08004012
ABSTRACT:
A photo-detector with a reduced G-R noise comprises two n-type narrow bandgap layers surrounding a middle barrier layer having an energy bandgap at least equal to the sum of the bandgaps of the two narrow bandgap layers. Under the flat band conditions the conduction band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer by at least the bandgap energy of the other narrow bandgap layer. When biased with an externally applied voltage, the more negatively biased narrow bandgap layer is the contact layer and the more positively biased narrow bandgap layer is the photon absorbing layer. Under external bias conditions the bands in the photon absorbing layer next to the barrier layer are flat or accumulated, and the flat part of the valence band edge in the photon absorbing layer lies below the flat part of the valence band edge of the contact layer and has an energy of not more than 10kTop above the valence band edge in any part of the barrier layer (k=Boltzman constant and Top=operating temperature).
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Dickey Thomas L
Morrison & Foerster / LLP
Semi-Conductor Devices—An Elbit Systems-Rafael Partnershi
Yushin Nikolay
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