Unipolar band minima devices

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device

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257 11, 257 18, 2571831, 257191, H01L 310328, H01L 2906, H01L 310336, H01L 31072

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active

054970121

ABSTRACT:
A semiconductor diode for providing a reduced recovery time at room temperature independent of any minority carrier recombination. The diode of the present invention comprises a first semiconductor material having a type of majority carriers and having a sub-band ordering associated with the majority carriers. The diode further comprises a second semiconductor material contacting the first material at a heterojunction, the second semiconductor material having the same type of majority carriers as the first semiconductor material and having a sub-band ordering associated with the majority carriers that is different from that of the first semiconductor material. It is theorized that the semiconductor diode of the present invention has a recovery time dependent upon scattering of carriers to various energy sub-bands within a heterojunction of the two different semiconductor materials. The diode of the present invention provides a reduced recovery time since a time of such scattering is extremely short.

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